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FSX027X
GaAs FET & HEMT Chips FEATURES
* Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz * High Power Gain: G1dB=10dB(Typ.)@8.0GHz * Proven Reliability
DRAIN
DESCRIPTION
The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25C)
Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Condition Rating 12 -5 Tc = 25C 1.5 -65 to 175 175 Unit V V W C C
SOURCE SOURCE
GATE
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas P1dB VDS = 3V, IDS = 30mA f = 8GHz Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 54mA VDS = 3V, IDS = 5.4mA IGS = -5.4A Min. 70 -0.7 -5.0 Limit Typ. Max. 110 100 -1.2 2.5 9.5 24.5 24.5 23.5 14.0 10.0 6.5 70 150 -1.7 100 Unit mA mS V V dB dB dBm dBm dBm dB dB dB C/W
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P. Thermal Resistance
G1dB Rth
f = 4GHz VDS = 8V, f = 8GHz 23.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 9.0 IDS = 0.7IDSS f = 12GHz Channel to Case -
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.2 July 1999
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FSX027X
GaAs FET & HEMT Chips
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Total Power Dissipation (W)
1.5 1.2 0.9 0.6 0.3
Drain Current (mA)
140 120 100 80 60 40 20
VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
0
50
100 150 200
2
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
26 VDS = 8V 24 Output Power (dBm) 22 20 18 16 14 12 10 8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
add
f=4GHz 8GHz 12GHz
P 1dB vs. VDS
f = 8GHz IDS = 0.7 IDSS
IDS = 0.5 IDSS
Pout
f=4GHz
8GHz
12GHz
25
60 50 40 30 20 10 0 add (%)
P 1dB (dBm)
23 21 19 17 4 5 6 7 8
Input Power (dBm)
Drain-Source Voltage (V)
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FSX027X
GaAs FET & HEMT Chips
S-PARAMETERS VDS = 8V, IDS = 75mA S21 S12 MAG ANG MAG ANG
7.117 6.065 5.015 4.168 3.520 3.026 2.644 2.336 2.089 1.887 1.716 1.569 1.441 1.332 1.238 1.155 1.074 1.001 .543 .888 153.2 130.8 113.3 99.4 87.9 77.9 69.0 60.9 53.1 45.8 36.7 32.0 25.4 18.9 12.6 6.6 .4 -5.5 -11.3 -16.9 .023 .040 .050 .055 .058 .060 .062 .063 .064 .065 .065 .065 .066 .067 .067 .068 .069 .068 .069 .069 67.6 50.3 37.4 28.8 22.2 17.3 13.6 10.2 7.0 4.4 2.1 0.0 -1.0 -3.5 -5.4 -6.1 -9.1 -10.4 -11.2 -13.4
FREQUENCY (MHZ)
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000
S11 MAG
.981 .946 .913 .882 .877 .867 .860 .854 .849 .845 .841 .837 .834 .829 .826 .824 .817 .813 .814 .811
S22 MAG
.633 .588 .548 .523 .506 .498 .499 .504 .515 .524 .539 .550 .561 .574 .589 .603 .623 .642 .657 .672
ANG
-41.2 -75.2 -100.3 -118.9 -132.7 -143.6 -152.5 -159.9 -166.3 -172.0 -177.2 178.3 174.1 169.8 166.1 162.7 159.3 155.9 152.8 150.1
ANG
-14.9 -26.6 -35.2 -42.1 -48.4 -54.7 -60.9 -67.1 -73.4 -79.0 -84.7 -90.3 -95.7 -101.2 -106.8 -112.5 -118.0 -123.1 -127.9 -132.7
NOTE:* The data includes bonding wires.
n: number of wires Gate n=1 (0.2mm length, 25m Dia Au wire) Drain n=1 (0.2mm length, 25m Dia Au wire) Source n=4 (0.2mm length, 25m Dia Au wire)
Download S-Parameters, click here
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FSX027X
GaAs FET & HEMT Chips
CHIP OUTLINE
49020 167
DRAIN
43020
200
SOURCE
102
SOURCE
GATE
100 167
Die Thickness: 10020m (Unit: m)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
102
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
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